Volume 6, Issue 3, May 2017, Page: 148-153
Studies on Activation of High-Mobility III-V Group Semiconductor Materials by Using Microwave Annealing
Tzu-Lang Shih, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China
Wen-Hsi Lee, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
Received: May 10, 2017;       Published: May 10, 2017
DOI: 10.11648/j.ijmsa.20170603.16      View  2628      Downloads  161
Abstract
As semiconductors devices scale down, silicon transistors would reach its limitation below 10 nm. Researching for the novel materials, which could replace silicon, is important. In this study, the new potential materials III-V Group compound semiconductors which are ion implanted with low energy and low dose. In order to keep the ultra-shallow junction and get the best activation, the new annealing technology ─ microwave annealing (MWA) is employed. Microwave annealing is a processing with low energy and longer period. In contrast to the conventional high thermal annealing methods such as rapid thermal annealing (RTA), it is a process with high temperature and ultra-short time. However, the high temperature could cause the dopants diffusion and the ultra-short time might make the destroyed lattices repaired not completely. Ion implant with silicon at different temperature (80°C, and 150°C) into In0.47Ga0.53As(300 nm)/InP substrate, and annealed by low-energy MWA and traditional RTA, respectively to research SPER and electrical activation. By using Raman spectrum, we discover that using MWA energy 2.5P(1.5kW) for 100 s could make the III-V materials achieve SPER by repairing fully. From TEM images, the amorphous layer caused by ion implantation could be recovered to crystal lattices during implantation temperature at 150°C. After annealing by MWA 2.5P(1.5kW) for 100 s, the defects of stacking faults are repaired completely to attain SPER, and it can correspond the Raman results. By using SIMS analysis, it can demonstrate that MWA has better ability to control dopants diffusion. Finally, by using Photoluminescence spectroscopy analysis, the MWA energy 3P(1.8kW) for 100 s could just make silicon dopants get activation. After annealing by MWA 3.5P(2.1kW) for 100 s of implantation at 150°C has the best activation that it has the highest peak.
Keywords
III-V Group, Microwave Annealing, Activation
To cite this article
Tzu-Lang Shih, Wen-Hsi Lee, Studies on Activation of High-Mobility III-V Group Semiconductor Materials by Using Microwave Annealing, International Journal of Materials Science and Applications. Vol. 6, No. 3, 2017, pp. 148-153. doi: 10.11648/j.ijmsa.20170603.16
Reference
[1]
W. G. Opyd, J. F. Gibbons and A. J. Mardinly, "Precipitation of impurities in GaAs amorphized by ion implantation," Appl. Phys. Lett., vol. 53, no. 1515, 1988.
[2]
Tae-Woo Kim, Hyuk-Min Kwon, Seung Heon Shin, Chan-Soo Shin, Won-Kyu Park, Eddie Chiu, Manny Rivera, Jae Ik Lew, Dmitry Veksler, Tommaso Orzali, and Dae-Hyun Kim, "Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack," IEEE ELECTRON DEVICE LETTERS, vol. 36, no. 7, pp. 672-674, 2015.
[3]
Guntrade Roll, Jiongjiong Mo, Erik Lind, Sofia Johansson and Lars-Erik Wernersson, "Effect of Gate Voltage Stress on InGaAs MOSFET With HfO2 or Al2O3 Dielectric," IEEE TRANSACTIONSON DEVICE AND MATERIALSRELIABILITY, vol. 16, no. 2, pp. 112-116, 2016.
[4]
A. G. Lind, N. G. Rudawski, N. J. Vito, C. Hatem, M. C. Ridgway, R. Hengstebeck, B. R. Yates and K. S. Jones, "Maximizing electrical activation of ion-implanted Si in In0.53Ga0.47As," APPLIED PHYSICS LETTERS, vol. 103, 2013.
[5]
Aaron G. Linda, Henry L. Aldridge, Jr, Cory C. Bomberger, Christopher Hatem, Joshua M. O. Zide and Kevin S. Jones, " Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As," Journal of Vacuum Science & Technology B, vol. 33, 2015.
[6]
K. S. Jones, A. G. Linda, C. Hatemb, S. Moffattc and M. C. Ridgwayd, "A. Brief Review of Doping Issues in III-V Semiconductors," ECS Transactions, vol. 53, no. 3, pp. 97-105, 2013.
[7]
M. Edmonds, T. J Kent, M. Chang, J. Kachian, R. Droopad, E. Chagarov and A. C. Kummel, "Passivation of surface defects on InGaAs (001) and (110) surfaces in preparation for subsequent gate oxide ALD,"2015 International Symposium on VLSI Technology, Systems and Applications, 2015.
[8]
C. Hu, P. Xu, C. Fu, Z. Zhu, X. Gao, A. Jamshidi, M. Noroozi, H. Radamson, D. Wu and S.-L. Zhang, "Characterization of Ni(Si,Ge) films on epitaxial SiGe(100) formed by microwave annealing," Appl. Phys. Lett., no. 101, p. 092101, 2012.
[9]
A. Lind, M. Gill, C. Hatem and K. Jones, "Electrical activation of ion implanted Si in amorphous and crystalline In0.53Ga0.47As," Nuclear Instruments and Methods in Physics Research B, vol. 337, pp. 7-10, 2014.
[10]
C. Licoppe, Y. I. Nissim, C. Meriadec and P. Hénoc, "Recrystallization kinetics pattern in III-V implanted semiconductors," Appl. Phys. Lett., vol. 50, no. 1648, 1987.
[11]
S. PEARTON, "ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY," Int. J. Mod. Phys. B, vol. 07, no. 4687, 1993.
[12]
J. Williams and M. Austin, "Low-temperature epitaxial regrowth of ion implanted-amorphous GaAs," Appl. Phys. Lett., vol. 36, no. 994, 1980.
[13]
S. Hogg, D. Llewellyn, H. Tan and M. Ridgway, "Solid-phase epitaxial growth of AlxGa1−xAsAlxGa1−xAs alloys as a function of Al content," Appl. Phys. Lett., vol. 71, no. 1397, 1997.
[14]
S. Hernández, R. Cuscó, N. Blanco, G. González-Dı́az and L. Artús, "Study of the electrical activation of Si + -implanted InGaAs by means of Raman scattering," JOURNAL OF APPLIED PHYSICS, vol. 93, no. 5, 1 MARCH 2003.
Browse journals by subject