Volume 3, Issue 6-1, December 2014, Page: 20-23
Impact of γ-Irradition on Srtucture and Electrophysical Properties of CdMnTe
M. A. Mehrabova, Institute of Radiation Problems of Azerbaijan National Academy of Sciences, Baku, Azerbaijan
H. R. Nuriyev, Institute of Physics of Azerbaijan National Academy of Sciences, Baku, Azerbaijan
T. B. Taghiyev, Institute of Radiation Problems of Azerbaijan National Academy of Sciences, Baku, Azerbaijan
R. M. Sadigov, Institute of Physics of Azerbaijan National Academy of Sciences, Baku, Azerbaijan
A. M. Nazarov, Institute of Physics of Azerbaijan National Academy of Sciences, Baku, Azerbaijan
N. I. Huseynov, Institute of Radiation Problems of Azerbaijan National Academy of Sciences, Baku, Azerbaijan
Received: Dec. 1, 2014;       Accepted: Dec. 3, 2014;       Published: Dec. 27, 2014
DOI: 10.11648/j.ijmsa.s.2014030601.15      View  2886      Downloads  100
Abstract
Cd1-хMnхTe(x=0.05) thin films have been obtained on mica substrates. The surface morphology of samples examined with scanning electron analytical microscope JEOL JSM 7600F and AFM. We obtained Cd1-xMnxTe (х=0.05) thin films of high perfection with smooth and glossy surface and having homogeneous composition of Cd, Te, Mn. The crystal structure of obtained samples was investigated by x-ray diffraction method. It has been found that the synthesized samples and films obtained on mica substrates have a polycrystalline structure and indicated on the base of cubic lattice. It has been studied the impact of γ-irradiation on structure of Cd1-хMnхTe (x=0.05) thin films. The samples were irradiated by γ-ray 3 times at T=300 K. After irradiation the intensity in X-ray diffraction patterns is changed. The x-ray patterns of non-irradiated samples showed all the characteristic scattering peaks. While, the x-ray patterns of irradiated sample appeared different. The irradiated samples showed less degree of crystallinity as evidenced by fewer peaks of lower intensity. We have investigated the influence of -radiation on electrophysical properties of Cd1-хMnхTе thin films at T=300 K. Samples were irradiated 3 times by γ-ray at Dϒ=1051krad doses. As a result the VAC has changed after irradiation in dependence of -irradiation dose. The resistance is changed too. After γ-irradiation till D=30krad doses the photosensitivity is increased but the further increasing of doses leads to disappearing of sensitivity.
Keywords
Semimagnetic Semiconductor, Thin Film, Crystal Structure, Substrate, X-Ray Diffraction Method, Sensitivity, Photoconductivity, VAC
To cite this article
M. A. Mehrabova, H. R. Nuriyev, T. B. Taghiyev, R. M. Sadigov, A. M. Nazarov, N. I. Huseynov, Impact of γ-Irradition on Srtucture and Electrophysical Properties of CdMnTe, International Journal of Materials Science and Applications. Special Issue:Materials Science. Vol. 3, No. 6-1, 2014, pp. 20-23. doi: 10.11648/j.ijmsa.s.2014030601.15
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